Formation and crystal structure of GaSb/GaP quantum dots

D. S. Abramkin; E. A. Emelyanov; M. A. Putyato; A. K. Gutakovskii; A. S. Kozhukhov; B. R. Semyagin; V. V. Preobrazhenskii; T. S. Shamirzaev

doi:10.3103/S1062873816010032

Formation and crystal structure of GaSb/GaP quantum dots

Authors: Abramkin D.S.¹, Emelyanov E.A.¹, Putyato M.A.¹, Gutakovskii A.K.¹^,2, Kozhukhov A.S.¹, Semyagin B.R.¹, Preobrazhenskii V.V.¹, Shamirzaev T.S.¹^,2
Affiliations:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
2. Novosibirsk State University
Issue: Vol 80, No 1 (2016)
Pages: 17-22
Section: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
URL: https://journal-vniispk.ru/1062-8738/article/view/183527
DOI: https://doi.org/10.3103/S1062873816010032
ID: 183527

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Abstract

The atomic structure of GaSb/GaP quantum dots grown via molecular beam epitaxy on a (100) GaP surface at epitaxy temperatures of 420–470°C is investigated. It is established that, depending on morphology of the GaP growth surface, the deposition of 1 ML of GaSb leads to the formation of strained Ga(Sb, P)/GaP or fully relaxed GaSb/GaP quantum dots. The obtained heterostructures exhibit high photoluminescence efficiency.