Model of resistive switching in a nonuniformly strained carbon nanotube

M. V. Il’ina; Yu. F. Blinov; O. I. Il’in; A. V. Guryanov; O. A. Ageev

doi:10.3103/S1062873817120140

Model of resistive switching in a nonuniformly strained carbon nanotube

Authors: Il’ina M.V.¹, Blinov Y.F.¹, Il’in O.I.¹, Guryanov A.V.¹, Ageev O.A.¹
Affiliations:
1. Research and Education Center Nanotechnologies
Issue: Vol 81, No 12 (2017)
Pages: 1485-1489
Section: Article
URL: https://journal-vniispk.ru/1062-8738/article/view/185258
DOI: https://doi.org/10.3103/S1062873817120140
ID: 185258

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Abstract

The effect elastic strain and piezoelectric charge redistributions have on the transmission of current is considered in a nonuniformly strained carbon nanotube. Both processes result in a reproducible resistive switching effect, allowing the fabrication of memristor structures based on them.