Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

A. A. Shul’zhenko; L. Jaworska; A. N. Sokolov; L. A. Romanko; V. G. Gargin; N. N. Belyavina; V. N. Tkach; A. P. Zakora

doi:10.3103/S1063457618060102

Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite

作者: Shul’zhenko A.A.¹, Jaworska L.², Sokolov A.N.¹, Romanko L.A.¹, Gargin V.G.¹, Belyavina N.N.³, Tkach V.N.¹, Zakora A.P.¹
隶属关系:
1. Bakul Institute for Superhard Materials
2. The Institute of Advanced Manufacturing Technology
3. Taras Shevchenko Kiev National University
期: 卷 40, 编号 6 (2018)
页面: 435-438
栏目: Letters to the Editor
URL: https://journal-vniispk.ru/1063-4576/article/view/186385
DOI: https://doi.org/10.3103/S1063457618060102
ID: 186385

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The influence was studied of the addition of n-layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.