Nano Periodic Structure Formation in 4H–SiC Crystal Using Femtosecond Laser Double-Pulses
- Авторлар: Kim E.1, Shimotsuma Y.1, Sakakura M.2, Miura K.1
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Мекемелер:
- Department of Material Chemistry, Graduate School of Engineering
- Next Generation Laser Processing Technology Research Association
- Шығарылым: Том 40, № 4 (2018)
- Беттер: 259-266
- Бөлім: Production, Structure, Properties
- URL: https://journal-vniispk.ru/1063-4576/article/view/186264
- DOI: https://doi.org/10.3103/S1063457618040056
- ID: 186264
Дәйексөз келтіру
Аннотация
The photo-induced periodic nano structure inside 4H–SiC has been induced by a femtosecond double pulse train. The alignment of the periodic structure is in the direction independently from crystal orientation. In particular, FE-SEM analysis revealed that the periodic structure on the fractured surface can be classified into two categories of the polarization-dependent and polarization-independent.
Негізгі сөздер
Авторлар туралы
E. Kim
Department of Material Chemistry, Graduate School of Engineering
Хат алмасуға жауапты Автор.
Email: eunhokim@func.mc.kyoto-u.ac.jp
Жапония, Kyoto, 615-8510
Y. Shimotsuma
Department of Material Chemistry, Graduate School of Engineering
Email: eunhokim@func.mc.kyoto-u.ac.jp
Жапония, Kyoto, 615-8510
M. Sakakura
Next Generation Laser Processing Technology Research Association
Email: eunhokim@func.mc.kyoto-u.ac.jp
Жапония, Kyoto, 615-8245
K. Miura
Department of Material Chemistry, Graduate School of Engineering
Email: eunhokim@func.mc.kyoto-u.ac.jp
Жапония, Kyoto, 615-8510
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