Editorial Team

EDITORS-IN-CHIEF

  • Gennady Ya. Krasnikov
    Dr. Sci., Full Member of the Russian Academy of Sciences, Molecular Electronics Research Institute (JSC MERI), Moscow, Russia

DEPUTY EDITORS-IN-CHIEF

  • Igor G. Neizvestny
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics of Siberian Branch of Russian Academy of Sciences Novosibirsk, Russia
  • Vladimir F. Lukichev
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Valiev Institute of Physics and Technology of Russian Academy of Sciences (Valiev IPT RAS), Moscow, Russia

COORDINATING EDITORS

  • Konstantin V. Rudenko
    Dr. Sci., Valiev Institute of Physics and Technology of Russian Academy of Sciences (Valiev IPT RAS), Moscow, Russia

EDITORIAL BOARD

  • Alexander A. Gorbacevich
    Dr. Sci., Full Member of the Russian Academy of Sciences, Prof., Lebedev Physical Institute of the Russian Academy of Sciences (LPI RAS), Moscow, Russia
  • Alexander S. Sigov
    Dr. Sci., Full Member of the Russian Academy of Sciences, Prof., MIREA - Russian Technological University, Moscow, Russia
  • Anastas A. Buharaev
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Zavoisky Physical-Technical Institute of the Kazan Scientific Center of the Russian Academy of Sciences (KPhTI), Kazan, Russia
  • Dmitry V. Roshchupkin
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials of Russian Academy of Sciences, Chernogolovka, Russia
  • Eugeniy S. Gornev
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Prof., Molecular Electronics Research Institute (JSC MERI), Moscow, Russia
  • Fadey F. Komarov
    Dr. Sci., Full Member of the National Academy of Sciences of Belarus, Prof., Institute of Applied Physics Problems of the Belarusian State University, Minsk, Belarus
  • Igor I. Abramov
    Dr. Sci., Prof., Belarusian State University of Informatics and Radioelectronics (BSUIR), Minsk, Belarus
  • Mikhail N. Strikhanov
    Dr. Sci., Full Member of the Russian Academy of Sciences, Prof., National Research Nuclear University MEPhI, Moscow, Russia
  • Mikhail R. Baklanov
    Dr. Sci., Prof., North China University of Technology (NCUT), Beijing, China
  • Petr P. Maltsev
    Dr. Sci., Mokerov Institute of Ultra High Frequency Semiconductor Electronics of Russian Academy of Sciences, Moscow, Russia
  • Robert A. Suris
    Dr. Sci., Prof., Full Member of the Russian Academy of Sciences, Ioffe Institute, St. Petersburg, Russia
  • Vadim A. Shakhnov
    Dr. Sci., Corresponding Member of the Russian Academy of Sciences, Prof., Bauman Moscow State Technical University, Moscow, Russia
  • Vladimir P. Popov
    Dr. Sci., Prof., Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences (ISP SB RAS), Novosibirsk, Russia
  • Yurii A. Chaplygin
    Dr. Sci., Full Member of the Russian Academy of Sciences, Prof., National Research University of Electronic Technology, Moscow, Russia