Email this article Nanoheterostructures optimization and characteristics improvement for devices based on them
- Authors: Rabinovich O.I.1, Didenko S.I.1
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Affiliations:
- National University of Science and Technology MISiS
- Issue: Vol 62, No 3 (2017)
- Pages: 474-479
- Section: Nanomaterials and Ceramics
- URL: https://journal-vniispk.ru/1063-7745/article/view/191068
- DOI: https://doi.org/10.1134/S1063774517020237
- ID: 191068
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Abstract
The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current–voltage (I–V) characteristics, dependence of the internal quantum efficiency on the quantum wells quantity, and spectral characteristics. The influence of the In atoms nonuniform distribution in the quantum-well region is determined.
About the authors
O. I. Rabinovich
National University of Science and Technology MISiS
Author for correspondence.
Email: rawork2008@mail.ru
Russian Federation, Moscow, 119049
S. I. Didenko
National University of Science and Technology MISiS
Email: rawork2008@mail.ru
Russian Federation, Moscow, 119049
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