Gallium vacancy ordering in Ga2Se3 thin layers on Si(100), Si(111), and Si(123) substrates

Abstract

Thin Ga₂Se₃ layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga₃Se₄(100)с(2 × 2) and Ga₂Se₃(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.