Отправить статью по E-mail Ga2O3–In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity
- Авторы: Muslimov A.E.1, Butashin A.V.1, Kolymagin A.B.1, Nabatov B.V.1, Kanevsky V.M.1
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Учреждения:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
- Выпуск: Том 62, № 6 (2017)
- Страницы: 940-946
- Раздел: Surface and Thin Films
- URL: https://journal-vniispk.ru/1063-7745/article/view/191526
- DOI: https://doi.org/10.1134/S1063774517060177
- ID: 191526
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Аннотация
The structure and electrical and optical properties of β-Ga2O3–In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.
Об авторах
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Автор, ответственный за переписку.
Email: amuslimov@mail.ru
Россия, Moscow, 117333
A. Butashin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Россия, Moscow, 117333
A. Kolymagin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Россия, Moscow, 117333
B. Nabatov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Россия, Moscow, 117333
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Россия, Moscow, 117333
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