Email this article Kinetics of State Switching in Quasi-One-Dimensional Nanosystems. Statistical Model of the Influence of Defects
- Authors: Petukhov B.V.1
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
- Issue: Vol 63, No 2 (2018)
- Pages: 245-249
- Section: Nanomaterials and Ceramics
- URL: https://journal-vniispk.ru/1063-7745/article/view/192331
- DOI: https://doi.org/10.1134/S1063774518020190
- ID: 192331
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Abstract
The role of native and radiation-induced defects in the state switching kinetics for one-dimensional systems (nanowires, molecular single-chain magnets, biological macromolecules, and many others) has been studied. An analytical approach to the description of the influence of randomly located defects on the dynamics of new-phase domains is developed using an analogy with stochastic processes in queueing theory. This method makes it possible to calculate threshold phenomena and the dependence of switching fields on material parameters.
About the authors
B. V. Petukhov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Author for correspondence.
Email: petukhov@ns.crys.ras.ru
Russian Federation, Moscow, 119333
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