Determination of the Thermodynamic Parameters of Doping Silicon by Means of Thermomigration

Abstract

The effect of the Al–Ga melt composition on the mass transfer processes occurring during silicon recrystallization has been investigated by the thermomigration method. The threshold temperatures of thermomigration onset are determined. The kinetic regularities of liquid zone thermomigration, related to the recrystallization temperature and liquid phase composition, are established. The silicon solubility is studied in wide ranges of temperature and Al–Ga melt composition. The results obtained are analyzed within the simple-solution model. Based on the experimental data on solubility, the parameters of interatomic interaction between components in the liquid phase are determined. The liquidus surface for the Si–Al–Ga ternary system is built in wide temperature and composition ranges. The results of studying the structural quality and electrical properties of recrystallized silicon layers are reported.