Email this article Development of Methods for Controlling Crystal Growth Using Thermal Effect on Melt
- Authors: Korobeinikova E.N.1, Prokhorov I.A.1, Strelov V.I.1
-
Affiliations:
- Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics” of Russian Academy of Sciences
- Issue: Vol 64, No 3 (2019)
- Pages: 484-487
- Section: Crystal Growth
- URL: https://journal-vniispk.ru/1063-7745/article/view/194015
- DOI: https://doi.org/10.1134/S1063774519030155
- ID: 194015
Cite item
Open Access
Access granted
Subscription Access
Abstract
The influence of low-energy thermal effects on the structural and concentration inhomogeneities in gallium-doped germanium single crystals, grown by directional solidification, has been investigated. A correlation of the thermal effects with the character of dopant distribution and interface shape change in grown crystals is established.
About the authors
E. N. Korobeinikova
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Author for correspondence.
Email: enkorob@mail.ru
Russian Federation, Moscow, 119333
I. A. Prokhorov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Russian Federation, Moscow, 119333
V. I. Strelov
Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”of Russian Academy of Sciences
Email: enkorob@mail.ru
Russian Federation, Moscow, 119333
Supplementary files
