Email this article Stopping characteristics of boron and indium ions in silicon
- Authors: Veselov D.S.1, Voronov Y.A.1
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Affiliations:
- National Research Nuclear University MEPhI
- Issue: Vol 79, No 14 (2016)
- Pages: 1678-1681
- Section: Interaction of Plasma, Particle Beams, and Radiation with Matter
- URL: https://journal-vniispk.ru/1063-7788/article/view/191371
- DOI: https://doi.org/10.1134/S1063778816140155
- ID: 191371
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Abstract
The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.
About the authors
D. S. Veselov
National Research Nuclear University MEPhI
Author for correspondence.
Email: DSVeselov@mephi.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409
Yu. A. Voronov
National Research Nuclear University MEPhI
Email: DSVeselov@mephi.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409
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