🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%СF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

About the authors

G. E. Gavrilov

Petersburg Nuclear Physics Institute

Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, mkr. Orlova roshcha 1, Gatchina, Leningrad oblast, 188300

V. M. Vakhtel

Voronezh State University

Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018

D. A. Maysuzenko

Petersburg Nuclear Physics Institute

Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, mkr. Orlova roshcha 1, Gatchina, Leningrad oblast, 188300

T. A. Tavtorkina

Petersburg Nuclear Physics Institute

Author for correspondence.
Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, mkr. Orlova roshcha 1, Gatchina, Leningrad oblast, 188300

A. A. Fetisov

Petersburg Nuclear Physics Institute

Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, mkr. Orlova roshcha 1, Gatchina, Leningrad oblast, 188300

N. Yu. Shvetsova

Petersburg Nuclear Physics Institute

Email: tavtorkina@lns.pnpi.spb.ru
Russian Federation, mkr. Orlova roshcha 1, Gatchina, Leningrad oblast, 188300

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2017 Pleiades Publishing, Ltd.