Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.

About the authors

R. Sh. Ramakoti

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Author for correspondence.
Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

O. B. Anan’in

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

A. P. Melekhov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

I. A. Gerasimov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

G. S. Bogdanov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

V. G. Sredin

Peter the Great Military Academy of Strategic Missile Forces

Email: RSRamakoti@mephi.ru
Russian Federation, Balashikha, Moscow oblast, 143900

I. K. Novikov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

I. V. Frolova

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

P. S. Dzhumaev

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: RSRamakoti@mephi.ru
Russian Federation, Moscow, 115409

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2019 Pleiades Publishing, Ltd.