Time-of-flight measurements of heavy ions using Si PIN diodes

A. O. Strekalovsky; G. V. Mishinsky; E. A. Kuznetsova; N. Jacobs; I. A. Alexandrova; A. A. Alexandrov; S. Ilić; V. E. Zhuchko; N. A. Kondratyev; Yu. V. Pyatkov; D. V. Kamanin; O. V. Strekalovsky

doi:10.1134/S1063778816090131

Time-of-flight measurements of heavy ions using Si PIN diodes

Авторлар: Strekalovsky A.O.¹, Mishinsky G.V.¹, Kuznetsova E.A.¹, Jacobs N.², Alexandrova I.A.¹, Alexandrov A.A.¹, Ilić S.³^,1, Zhuchko V.E.¹, Kondratyev N.A.¹, Pyatkov Y.V.⁴^,1, Kamanin D.V.¹, Strekalovsky O.V.¹
Мекемелер:
1. Joint Institute for Nuclear Research
2. Faculty of Military Science, Military Academy
3. University of Novi Sad
4. National Nuclear Research University MEPhI (Moscow Engineering Physics Institute)
Шығарылым: Том 79, № 9-10 (2016)
Беттер: 1386-1390
Бөлім: Engineering Design of Nuclear Physics Equipment
URL: https://journal-vniispk.ru/1063-7788/article/view/191096
DOI: https://doi.org/10.1134/S1063778816090131
ID: 191096

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Аннотация

A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.