Theoretical Approach to Energy Resolution of Semiconductor Detectors
- Авторлар: Samedov V.V.1
-
Мекемелер:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Шығарылым: Том 80, № 9 (2017)
- Беттер: 1489-1494
- Бөлім: Math Modeling in Nuclear Technologies
- URL: https://journal-vniispk.ru/1063-7788/article/view/193281
- DOI: https://doi.org/10.1134/S1063778817090125
- ID: 193281
Дәйексөз келтіру
Аннотация
All processes occurring in semiconductor detectors during detection of primary monoenergetic particles lead to broadening of spectral lines. In this work, a general expression for the energy resolution of semiconductor detectors is obtained using the theory of branching cascade processes. It is shown that the general formula involves all contributions to the spectral line broadening described in the literature and additional contributions associated with fluctuations of electron and hole lifetimes caused by inhomogeneity of traps in the semiconductor material and fluctuations of the electronic channel gain.
Негізгі сөздер
Авторлар туралы
V. Samedov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Хат алмасуға жауапты Автор.
Email: v-samedov@yandex.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409
Қосымша файлдар
