Theoretical Approach to Energy Resolution of Semiconductor Detectors
- 作者: Samedov V.V.1
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隶属关系:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- 期: 卷 80, 编号 9 (2017)
- 页面: 1489-1494
- 栏目: Math Modeling in Nuclear Technologies
- URL: https://journal-vniispk.ru/1063-7788/article/view/193281
- DOI: https://doi.org/10.1134/S1063778817090125
- ID: 193281
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详细
All processes occurring in semiconductor detectors during detection of primary monoenergetic particles lead to broadening of spectral lines. In this work, a general expression for the energy resolution of semiconductor detectors is obtained using the theory of branching cascade processes. It is shown that the general formula involves all contributions to the spectral line broadening described in the literature and additional contributions associated with fluctuations of electron and hole lifetimes caused by inhomogeneity of traps in the semiconductor material and fluctuations of the electronic channel gain.
作者简介
V. Samedov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: v-samedov@yandex.ru
俄罗斯联邦, Kashirskoe sh. 31, Moscow, 115409
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