The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

L. Hrubčín; Yu. B. Gurov; B. Zat’ko; P. Boháček; S. V. Rozov; I. E. Rozova; V. G. Sandukovsky; V. A. Skuratov

doi:10.1134/S1063778819120111

The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

Авторлар: Hrubčín L.¹^,2, Gurov Y.B.¹^,3, Zat’ko B.², Boháček P.², Rozov S.V.¹, Rozova I.E.¹, Sandukovsky V.G.¹, Skuratov V.A.¹
Мекемелер:
1. Joint Institute for Nuclear Research
2. Institute of Electrical Engineering
3. Moscow Engineering Physics Institute
Шығарылым: Том 82, № 12 (2019)
Беттер: 1682-1685
Бөлім: Engineering Design of Nuclear Physics Equipment
URL: https://journal-vniispk.ru/1063-7788/article/view/195934
DOI: https://doi.org/10.1134/S1063778819120111
ID: 195934

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The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiation by accelerated xenon ions with different energies. It is shown that this parameter in the spectroscopic analysis of Xe ions is ∼45% of the true energy of the particles in question.