The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions


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The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiation by accelerated xenon ions with different energies. It is shown that this parameter in the spectroscopic analysis of Xe ions is ∼45% of the true energy of the particles in question.

作者简介

L. Hrubčín

Joint Institute for Nuclear Research; Institute of Electrical Engineering

Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980; Bratislava, 84104

Yu. Gurov

Joint Institute for Nuclear Research; Moscow Engineering Physics Institute

Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980; Moscow, 115409

B. Zat’ko

Institute of Electrical Engineering

Email: rozovs@jinr.ru
斯洛伐克, Bratislava, 84104

P. Boháček

Institute of Electrical Engineering

Email: rozovs@jinr.ru
斯洛伐克, Bratislava, 84104

S. Rozov

Joint Institute for Nuclear Research

编辑信件的主要联系方式.
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980

I. Rozova

Joint Institute for Nuclear Research

Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980

V. Sandukovsky

Joint Institute for Nuclear Research

Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980

V. Skuratov

Joint Institute for Nuclear Research

Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980

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