The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions
- 作者: Hrubčín L.1,2, Gurov Y.B.1,3, Zat’ko B.2, Boháček P.2, Rozov S.V.1, Rozova I.E.1, Sandukovsky V.G.1, Skuratov V.A.1
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隶属关系:
- Joint Institute for Nuclear Research
- Institute of Electrical Engineering
- Moscow Engineering Physics Institute
- 期: 卷 82, 编号 12 (2019)
- 页面: 1682-1685
- 栏目: Engineering Design of Nuclear Physics Equipment
- URL: https://journal-vniispk.ru/1063-7788/article/view/195934
- DOI: https://doi.org/10.1134/S1063778819120111
- ID: 195934
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详细
The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiation by accelerated xenon ions with different energies. It is shown that this parameter in the spectroscopic analysis of Xe ions is ∼45% of the true energy of the particles in question.
作者简介
L. Hrubčín
Joint Institute for Nuclear Research; Institute of Electrical Engineering
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980; Bratislava, 84104
Yu. Gurov
Joint Institute for Nuclear Research; Moscow Engineering Physics Institute
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980; Moscow, 115409
B. Zat’ko
Institute of Electrical Engineering
Email: rozovs@jinr.ru
斯洛伐克, Bratislava, 84104
P. Boháček
Institute of Electrical Engineering
Email: rozovs@jinr.ru
斯洛伐克, Bratislava, 84104
S. Rozov
Joint Institute for Nuclear Research
编辑信件的主要联系方式.
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980
I. Rozova
Joint Institute for Nuclear Research
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980
V. Sandukovsky
Joint Institute for Nuclear Research
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980
V. Skuratov
Joint Institute for Nuclear Research
Email: rozovs@jinr.ru
俄罗斯联邦, Dubna, Moscow oblast, 141980
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