Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen
- Authors: Tarasenko V.F.1,2, Baksht E.K.1, Beloplotov D.V.1,2, Burachenko A.G.1,2, Lomaev M.I.1,2
- 
							Affiliations: 
							- Institute of High Current Electronics
- National Research Tomsk State University
 
- Issue: Vol 42, No 4 (2016)
- Pages: 369-381
- Section: Low-Temperature Plasma
- URL: https://journal-vniispk.ru/1063-780X/article/view/185687
- DOI: https://doi.org/10.1134/S1063780X16040085
- ID: 185687
Cite item
Abstract
The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.
About the authors
V. F. Tarasenko
Institute of High Current Electronics; National Research Tomsk State University
							Author for correspondence.
							Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
E. Kh. Baksht
Institute of High Current Electronics
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055						
D. V. Beloplotov
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
A. G. Burachenko
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
M. I. Lomaev
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
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