Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen
- Autores: Tarasenko V.F.1,2, Baksht E.K.1, Beloplotov D.V.1,2, Burachenko A.G.1,2, Lomaev M.I.1,2
- 
							Afiliações: 
							- Institute of High Current Electronics
- National Research Tomsk State University
 
- Edição: Volume 42, Nº 4 (2016)
- Páginas: 369-381
- Seção: Low-Temperature Plasma
- URL: https://journal-vniispk.ru/1063-780X/article/view/185687
- DOI: https://doi.org/10.1134/S1063780X16040085
- ID: 185687
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Resumo
The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.
Sobre autores
V. Tarasenko
Institute of High Current Electronics; National Research Tomsk State University
							Autor responsável pela correspondência
							Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
E. Baksht
Institute of High Current Electronics
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055						
D. Beloplotov
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
A. Burachenko
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
M. Lomaev
Institute of High Current Electronics; National Research Tomsk State University
														Email: vft@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050						
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