Auxiliary glow discharge in the trigger unit of a hollow-cathode thyratron
- Авторлар: Korolev Y.D.1,2,3, Landl N.V.1,2, Geyman V.G.1, Frants O.B.1,2, Shemyakin I.A.1,2, Nekhoroshev V.O.1,2
- 
							Мекемелер: 
							- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
 
- Шығарылым: Том 42, № 8 (2016)
- Беттер: 799-807
- Бөлім: Low-Temperature Plasma
- URL: https://journal-vniispk.ru/1063-780X/article/view/185922
- DOI: https://doi.org/10.1134/S1063780X16080055
- ID: 185922
Дәйексөз келтіру
Аннотация
Results from studies of a low-current glow discharge with a hollow cathode are presented. A specific feature of the discharge conditions was that a highly emissive tablet containing cesium carbonate was placed in the cathode cavity. In the absence of a tablet, the discharge ignition voltage was typically ≥3.5 kV, while the burning voltage was in the range of 500–600 V. The use of the tablet made it possible to decrease the ignition voltage to 280 V and maintain the discharge burning voltage at a level of about 130 V. A model of the current sustainment in a hollow-cathode discharge is proposed. Instead of the conventional secondary emission yield, the model uses a generalized emission yield that takes into account not only ion bombardment of the cathode, but also the emission current from an external source. The model is used to interpret the observed current−voltage characteristics. The results of calculations agree well with the experimental data. It is shown that, in some discharge modes, the external emission current from the cathode can reach 25% of the total discharge current.
Авторлар туралы
Yu. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
														Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050; Leninskii pr. 30, Tomsk, 634050						
N. Landl
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
							Хат алмасуға жауапты Автор.
							Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050						
V. Geyman
Institute of High-Current Electronics, Siberian Branch
														Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055						
O. Frants
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050						
I. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050						
V. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: landl@lnp.hcei.tsc.ru
				                					                																			                												                	Ресей, 							Akademicheskii pr. 2/3, Tomsk, 634055; Leninskii pr. 36, Tomsk, 634050						
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