A Planar Source of Atmospheric-Pressure Plasma Jet
- Autores: Zhdanova O.S.1, Kuznetsov V.S.2,3, Panarin V.A.2, Skakun V.S.2, Sosnin E.A.2,3, Tarasenko V.F.2
- 
							Afiliações: 
							- Siberian State Medical University
- Institute of High Current Electronics, Siberian Branch
- Tomsk State University
 
- Edição: Volume 44, Nº 1 (2018)
- Páginas: 153-156
- Seção: Applied Physics
- URL: https://journal-vniispk.ru/1063-780X/article/view/186663
- DOI: https://doi.org/10.1134/S1063780X18010166
- ID: 186663
Citar
Resumo
In a single-barrier discharge with voltage sharpening and low gas consumption (up to 1 L/min), plane atmospheric pressure plasma jets with a width of up to 3 cm and length of up to 4 cm in air are formed in the slit geometry of the discharge zone. The energy, temperature, and spectral characteristics of the obtained jets have been measured. The radiation spectrum contains intense maxima corresponding to vibrational transitions of the second positive system of molecular nitrogen N2 (C3Πu → B3Πg) and comparatively weak transition lines of the first positive system of the N2+ ion (B2Σu+ → X2Σg). By an example of inactivation of the Staphylococcus aureus culture (strain ATCC 209), it is shown that plasma is a source of chemically active particles providing the inactivation of microorganisms.
Sobre autores
O. Zhdanova
Siberian State Medical University
							Autor responsável pela correspondência
							Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634050						
V. Kuznetsov
Institute of High Current Electronics, Siberian Branch; Tomsk State University
														Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055; Tomsk, 634050						
V. Panarin
Institute of High Current Electronics, Siberian Branch
														Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
V. Skakun
Institute of High Current Electronics, Siberian Branch
														Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
E. Sosnin
Institute of High Current Electronics, Siberian Branch; Tomsk State University
														Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055; Tomsk, 634050						
V. Tarasenko
Institute of High Current Electronics, Siberian Branch
														Email: badik@loi.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					