Development of Discharge in a Saline Solution at Near-Threshold Voltages
- Autores: Korolev Y.D.1,2,3, Shemyakin I.A.1,2, Kasyanov V.S.1,2, Geyman V.G.1, Bolotov A.V.1, Nekhoroshev V.O.1
- 
							Afiliações: 
							- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk Polytechnic University
 
- Edição: Volume 44, Nº 6 (2018)
- Páginas: 581-587
- Seção: Plasma Diagnostics
- URL: https://journal-vniispk.ru/1063-780X/article/view/186794
- DOI: https://doi.org/10.1134/S1063780X18060053
- ID: 186794
Citar
Resumo
The development of a discharge in a point−plane gap filled with a saline solution with a salt content of 3% was studied experimentally. The duration of the voltage pulse applied to the gap was about 2 ms. Data are presented on the formation dynamics of gas microcavities at near-threshold voltages at which gas-discharge plasma appears in some microcavities. The cavities are conglomerates of microbubbles with a typical size of ≈100 μm. At the threshold voltage (≈750 V), the active electrode is covered with a gas layer and the gap voltage is in fact applied to this layer, which leads to the development of discharges in individual microbubbles. In this case, the discharge operates in the form of short current pulses. The number of microcavities filled with plasma increases as the voltage grows above the threshold value. At the plasma boundary, new microbubbles are formed, in which discharges are ignited. As a result, the plasma front propagates from the active electrode into the gap with a characteristic velocity of 103 cm/s.
Sobre autores
Yu. Korolev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; Tomsk Polytechnic University
							Autor responsável pela correspondência
							Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055; Tomsk, 634050; Tomsk, 634050						
I. Shemyakin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055; Tomsk, 634050						
V. Kasyanov
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055; Tomsk, 634050						
V. Geyman
Institute of High-Current Electronics, Siberian Branch
														Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
A. Bolotov
Institute of High-Current Electronics, Siberian Branch
														Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
V. Nekhoroshev
Institute of High-Current Electronics, Siberian Branch
														Email: korolev@lnp.hcei.tsc.ru
				                					                																			                												                	Rússia, 							Tomsk, 634055						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					