Atmospheric-Pressure Microwave Plasma Torch for CVD Technology of Diamond Synthesis
- Autores: Sergeichev K.F.1, Lukina N.A.1, Arutyunyan N.R.1,2
- 
							Afiliações: 
							- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research Nuclear University “MEPhI”
 
- Edição: Volume 45, Nº 6 (2019)
- Páginas: 551-560
- Seção: Ion and Plasma Sources
- URL: https://journal-vniispk.ru/1063-780X/article/view/187168
- DOI: https://doi.org/10.1134/S1063780X19060096
- ID: 187168
Citar
Resumo
An electrodeless microwave jet plasma source is considered, and its various applications in the technology of chemical vapor deposition of diamond films and dimension increasing of small diamond single crystals synthesized at high pressures and temperatures are discussed. The plasma jet is ignited in an atmospheric-pressure gas (argon) flow with hydrogen and methane additives. The operation of the microwave jet reactor is described, and the plasma characteristics measured using emission spectroscopy are presented. The brightly glowing atmospheric-pressure plasma jet is ignited and stably burns at a microwave power of ≤1 kW supplied from a microwave oven magnetron. The specific microwave power density absorbed by the compact plasma jet (≤104 W/cm3) is comparable with that absorbed by a dc arc. The growth rate of the polycrystalline diamond layer amounts to 40 µm/h. The process of film deposition on the substrate can be controlled by scanning the substrate surface with the jet.
Sobre autores
K. Sergeichev
Prokhorov General Physics Institute of the Russian Academy of Sciences
							Autor responsável pela correspondência
							Email: k-sergeichev@yandex.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
N. Lukina
Prokhorov General Physics Institute of the Russian Academy of Sciences
														Email: k-sergeichev@yandex.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
N. Arutyunyan
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Research Nuclear University “MEPhI”
														Email: k-sergeichev@yandex.ru
				                					                																			                												                	Rússia, 							Moscow, 119991; Moscow, 115409						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					