Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon


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Abstract

We analyze the effect of irradiation by heavy ions on the formation of blisters on the silicon surface preliminarily ion-doped with hydrogen. An attempt is made at differentiating inelastic and elastic processes of interaction between ions and Si atoms using bombardment of the sample with high-energy charged particles through a bent absorbing filter by varying the radiation doses and the energy of bombarding Xe ions. It is found that irrespective of specific ionization energy losses of heavy ions, the blister formation is completely suppressed in the zone of the inelastic interaction during postradiation annealing. Conversely, stimulated development of hydrogen porosity takes place at the same time in the zone of elastic interaction, which is manifested in the form of blisters and flaking.

About the authors

V. F. Reutov

Joint Institute for Nuclear Research

Author for correspondence.
Email: reutov@jinr.ru
Russian Federation, Dubna, Moscow oblast, 141980

S. N. Dmitriev

Joint Institute for Nuclear Research

Email: reutov@jinr.ru
Russian Federation, Dubna, Moscow oblast, 141980

A. S. Sokhatskii

Joint Institute for Nuclear Research

Email: reutov@jinr.ru
Russian Federation, Dubna, Moscow oblast, 141980

A. G. Zaluzhnyi

National Research Nuclear University MEPhI

Email: reutov@jinr.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409

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