Generation of dual pulses of the runaway electron beam current during the subnanosecond breakdown of atomic and molecular gases
- Authors: Lomaev M.I.1,2, Tarasenko V.F.1,2,3, Sorokin D.A.1,2
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Affiliations:
- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
- National Research Tomsk Polytechnic University
- Issue: Vol 61, No 10 (2016)
- Pages: 1551-1560
- Section: Electrophysics, Electron and Ion Beams, Physics of Accelerators
- URL: https://journal-vniispk.ru/1063-7842/article/view/198271
- DOI: https://doi.org/10.1134/S106378421610025X
- ID: 198271
Cite item
Abstract
With a diaphragm placed behind the anode foil, dual runaway electron beams have been provided in helium, hydrogen, nitrogen, and air under a pressure of several torrs to several dozen torrs and a high-voltage pulse amplitude of about 250 kV. These beams consist of two pulses with commensurable amplitudes with a time interval between them of several dozen picoseconds to several hundred picoseconds. It has been shown that the breakdown of the interelectrode gap at pressures from several torrs to several dozen torrs may occur in different regimes and dual pulses of the electron beam current are registered when the initial current through the gap is below 1 kA. It has been found that a supershort avalanche electron beam that consists of one pulse is generated when the delay of breakdown equals several hundred picoseconds. It has been shown that, when the gas pressure reaches several hundred Torr, including atmospheric pressure, the runaway electrons are detected behind the foil after the termination of the supershort avalanche electron beam pulse.
About the authors
M. I. Lomaev
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050
V. F. Tarasenko
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University; National Research Tomsk Polytechnic University
Author for correspondence.
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050; pr. Lenina 30, Tomsk, 634059
D. A. Sorokin
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Akademicheskii pr. 2/3, Tomsk, 634055; pr. Lenina 36, Tomsk, 634050
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