Мақаланы E-mail арқылы жіберу Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
- Авторлар: Boltaev K.K.1, Sodikjanov Z.S.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
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Мекемелер:
- Tashkent State Technical University
- Шығарылым: Том 62, № 12 (2017)
- Беттер: 1882-1884
- Бөлім: Physics of Nanostructures
- URL: https://journal-vniispk.ru/1063-7842/article/view/200419
- DOI: https://doi.org/10.1134/S1063784217120040
- ID: 200419
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Аннотация
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
Авторлар туралы
Kh. Boltaev
Tashkent State Technical University
Хат алмасуға жауапты Автор.
Email: ftmet@rambler.ru
Өзбекстан, Universitetskaya ul. 2, Tashkent, 100095
Zh. Sodikjanov
Tashkent State Technical University
Email: ftmet@rambler.ru
Өзбекстан, Universitetskaya ul. 2, Tashkent, 100095
D. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Өзбекстан, Universitetskaya ul. 2, Tashkent, 100095
B. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Өзбекстан, Universitetskaya ul. 2, Tashkent, 100095
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