Email this article Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
- Authors: Boltaev K.K.1, Sodikjanov Z.S.1, Tashmukhamedova D.A.1, Umirzakov B.E.1
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Affiliations:
- Tashkent State Technical University
- Issue: Vol 62, No 12 (2017)
- Pages: 1882-1884
- Section: Physics of Nanostructures
- URL: https://journal-vniispk.ru/1063-7842/article/view/200419
- DOI: https://doi.org/10.1134/S1063784217120040
- ID: 200419
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Abstract
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
About the authors
Kh. Kh. Boltaev
Tashkent State Technical University
Author for correspondence.
Email: ftmet@rambler.ru
Uzbekistan, Universitetskaya ul. 2, Tashkent, 100095
Zh. Sh. Sodikjanov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, Universitetskaya ul. 2, Tashkent, 100095
D. A. Tashmukhamedova
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, Universitetskaya ul. 2, Tashkent, 100095
B. E. Umirzakov
Tashkent State Technical University
Email: ftmet@rambler.ru
Uzbekistan, Universitetskaya ul. 2, Tashkent, 100095
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