Specifics of operation of a cold-cathode thyratron with a backward voltage half-wave
- Авторлар: Korolev Y.D.1,2,3, Landl N.V.1,2, Geiman V.G.1, Frants O.B.1,2, Bolotov A.V.1, Nekhoroshev V.O.1,2, Kasyanov V.S.1,2
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Мекемелер:
- Institute of High Current Electronics, Siberian Branch
- National Research Tomsk State University
- National Research Tomsk Polytechnic University
- Шығарылым: Том 62, № 5 (2017)
- Беттер: 708-715
- Бөлім: Plasma
- URL: https://journal-vniispk.ru/1063-7842/article/view/199374
- DOI: https://doi.org/10.1134/S1063784217050140
- ID: 199374
Дәйексөз келтіру
Аннотация
The specifics of operating a metal-ceramic TPI1-10k/50 thyratron in electric circuits with capacitance, inductance, and active resistance have been examined under circuit parameters that establish oscillatory current. Experiments have been performed at an anode voltage as high as 30 kV, a forward current of up to 7.6 kA, and a length of the first current half-period that varies from 0.38 to 1.9 μs. The data on operating modes in which this thyratron may handle a backward current wave and when current interruption is observed in the second half-period have been obtained. It has been demonstrated that a certain current flows through the thyratron in the backward direction during the interruption process. The amplitude of this current and the maximum backward voltage at the thyratron define whether the current is interrupted or repeat back-voltage device breakdown occurs. If the maximum backward current is on the level of several hundred amperes, complete current interruption occurs at backward voltages of up to 12 kV. The physical mechanisms of current interruption have been discussed.
Авторлар туралы
Yu. Korolev
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University; National Research Tomsk Polytechnic University
Хат алмасуға жауапты Автор.
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055; Tomsk, 634055; Tomsk, 634055
N. Landl
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055; Tomsk, 634055
V. Geiman
Institute of High Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055
O. Frants
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055; Tomsk, 634055
A. Bolotov
Institute of High Current Electronics, Siberian Branch
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055
V. Nekhoroshev
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055; Tomsk, 634055
V. Kasyanov
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: korolev@lnp.hcei.tsc.ru
Ресей, Tomsk, 634055; Tomsk, 634055
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