Charge transfer and thermopower in TlGdS2
- 作者: Mustafaeva S.N.1, Asadov S.M.2
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隶属关系:
- Institute of Physics
- Nagiev Institute of Catalysis and Inorganic Chemistry
- 期: 卷 62, 编号 7 (2017)
- 页面: 1077-1081
- 栏目: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/199702
- DOI: https://doi.org/10.1134/S1063784217070167
- ID: 199702
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详细
The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS2 in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the p-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.
作者简介
S. Mustafaeva
Institute of Physics
编辑信件的主要联系方式.
Email: solmust@gmail.com
阿塞拜疆, pr. Javid 131, Baku, Az1143
S. Asadov
Nagiev Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
阿塞拜疆, pr. Javid 113, Baku, Az1143
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