Email this article Charge transfer and thermopower in TlGdS2
- Authors: Mustafaeva S.N.1, Asadov S.M.2
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Affiliations:
- Institute of Physics
- Nagiev Institute of Catalysis and Inorganic Chemistry
- Issue: Vol 62, No 7 (2017)
- Pages: 1077-1081
- Section: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/199702
- DOI: https://doi.org/10.1134/S1063784217070167
- ID: 199702
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Abstract
The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS2 in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the p-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.
About the authors
S. N. Mustafaeva
Institute of Physics
Author for correspondence.
Email: solmust@gmail.com
Azerbaijan, pr. Javid 131, Baku, Az1143
S. M. Asadov
Nagiev Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Azerbaijan, pr. Javid 113, Baku, Az1143
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