The effect of temperature instability on the threshold sensitivity of photodetectors based on AIII–BV photodiodes
- 作者: Aleksandrov S.E.1, Gavrilov G.A.1, Kapralov A.A.1, Sotnikova G.Y.1
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隶属关系:
- Ioffe Physical Technical Institute
- 期: 卷 42, 编号 3 (2016)
- 页面: 263-266
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/197775
- DOI: https://doi.org/10.1134/S1063785016030020
- ID: 197775
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详细
The dependence of the sensitivity of photodetectors based on AIII–BV photodiodes on accidental variations of the temperature of its elements is analyzed. It is shown that the temperature drift of the bias level in input circuits of op-amps strongly contributes to the resulting photodetector noise up to frequencies on the order of 1 MHz. To reach the limiting sensitivities of the sensors, it is necessary to stabilize the temperature of not only the photodiode chip, but also the integrated circuit of the first amplifier stage. For most of applications, the required stabilization accuracy does not exceed ±0.1°C. As a result of the analysis, prototype high-sensitivity medium-wavelength (2–5 μm) sensors were developed that operate without forced cooling and have a detection threshold of tens of nanowatts at a detection bandwidth of 0–1 MHz.
作者简介
S. Aleksandrov
Ioffe Physical Technical Institute
Email: g.sotnikova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Gavrilov
Ioffe Physical Technical Institute
Email: g.sotnikova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kapralov
Ioffe Physical Technical Institute
Email: g.sotnikova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Sotnikova
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: g.sotnikova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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