Email this article The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals
- Authors: Poletika T.M.1, Meisner L.L.1,2, Girsova S.L.1, Tverdokhlebova A.V.1, Meisner S.N.1,2
-
Affiliations:
- Institute of Strength Physics and Materials Science, Siberian Branch
- National Researh Tomsk State University
- Issue: Vol 42, No 3 (2016)
- Pages: 280-283
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/197884
- DOI: https://doi.org/10.1134/S1063785016030299
- ID: 197884
Cite item
Open Access
Access granted
Subscription Access
Abstract
The Auger electron spectroscopy and transmission electron microscopy techniques have been used to study the composition and structure of the surface layers of NiTi single crystals implanted with silicon ions at various directions of the incident ion beam. The role of “soft” [111]B2 and “hard” [001]B2 orientations of the NiTi single crystal in formation of the ion-beam-modified surface layer and the defect structure of Siion-implanted near-surface layers is revealed.
About the authors
T. M. Poletika
Institute of Strength Physics and Materials Science, Siberian Branch
Author for correspondence.
Email: poletm@ispms.tsc.ru
Russian Federation, Tomsk, 634021
L. L. Meisner
Institute of Strength Physics and Materials Science, Siberian Branch; National Researh Tomsk State University
Email: poletm@ispms.tsc.ru
Russian Federation, Tomsk, 634021; Tomsk, 634050
S. L. Girsova
Institute of Strength Physics and Materials Science, Siberian Branch
Email: poletm@ispms.tsc.ru
Russian Federation, Tomsk, 634021
A. V. Tverdokhlebova
Institute of Strength Physics and Materials Science, Siberian Branch
Email: poletm@ispms.tsc.ru
Russian Federation, Tomsk, 634021
S. N. Meisner
Institute of Strength Physics and Materials Science, Siberian Branch; National Researh Tomsk State University
Email: poletm@ispms.tsc.ru
Russian Federation, Tomsk, 634021; Tomsk, 634050
Supplementary files
