A microwave cryogenic low-noise amplifier based on sige heterostructures

Аннотация

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.