Email this article Electron heat conductivity of epitaxial graphene on silicon carbide
- Authors: Alisultanov Z.Z.1,2,3, Meilanov R.P.4
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Prokhorov General Physics Institute
- Dagestan State University
- Institute of Geothermal Problems, Dagestan Scientific Center
- Issue: Vol 42, No 8 (2016)
- Pages: 779-782
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/200358
- DOI: https://doi.org/10.1134/S1063785016080022
- ID: 200358
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Abstract
The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.
About the authors
Z. Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Scientific Center; Prokhorov General Physics Institute; Dagestan State University
Author for correspondence.
Email: zaur0102@gmail.com
Russian Federation, Makhachkala, Dagestan, 367003; Moscow, Dagestan, 119991; Makhachkala, Dagestan, 367000
R. P. Meilanov
Institute of Geothermal Problems, Dagestan Scientific Center
Email: zaur0102@gmail.com
Russian Federation, Makhachkala, Dagestan, 367030
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