High-efficiency two-frequency laser generation in three-barrier nanostructures with ballistic electron transport

Аннотация

For asymmetric three-barrier resonance-tunneling structures with thin high barriers, the dependence of the integral transmission coefficient on the amplitude and frequency of strong high-frequency resonance fields during two-photon transitions has been studied in the approximation of an electron distribution function weakly varying at energies on the order of several widths of the quantum level. It is established that, despite the strong dependence of the shape and width of resonance levels on the microwave field amplitude, the general pattern of integral electron–photon interaction in strong fields changes but little in a broad range of variation of the level widths and field amplitudes.