Enviar artigo por via de e-mail Terahertz emission at impurity electrical breakdown in Si(Li)
- Autores: Andrianov A.V.1, Zakhar’in A.O.1, Zhukavin R.K.2, Shastin V.N.2,3, Shengurov D.V.2, Abrosimov N.V.4
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Afiliações:
- Ioffe Physical Technical Institute
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Leibniz Institute for Crystal Growth
- Edição: Volume 42, Nº 10 (2016)
- Páginas: 1031-1033
- Seção: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/201690
- DOI: https://doi.org/10.1134/S1063785016100163
- ID: 201690
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Resumo
Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.
Sobre autores
A. Andrianov
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: alex.andrianov@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Zakhar’in
Ioffe Physical Technical Institute
Email: alex.andrianov@mail.ioffe.ru
Rússia, St. Petersburg, 194021
R. Zhukavin
Institute for Physics of Microstructures
Email: alex.andrianov@mail.ioffe.ru
Rússia, Afonino, Nizhny Novgorod oblast’, 603087
V. Shastin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: alex.andrianov@mail.ioffe.ru
Rússia, Afonino, Nizhny Novgorod oblast’, 603087; Nizhny Novgorod, 603950
D. Shengurov
Institute for Physics of Microstructures
Email: alex.andrianov@mail.ioffe.ru
Rússia, Afonino, Nizhny Novgorod oblast’, 603087
N. Abrosimov
Leibniz Institute for Crystal Growth
Email: alex.andrianov@mail.ioffe.ru
Alemanha, Berlin, 12489
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