Email this article Electron traps in Gd3Ga3Al2O12:Ce garnets doped with rare-earth ions
- Authors: Khanin V.M.1,2, Rodnyi P.A.1, Wieczorek H.2, Ronda C.R.2
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Philips Research Eindhoven
- Issue: Vol 43, No 5 (2017)
- Pages: 439-442
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/204524
- DOI: https://doi.org/10.1134/S1063785017050042
- ID: 204524
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Abstract
The curves of thermally stimulated luminescence of Gd3Ga3Al2O12:Ce3+ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80–550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd3Ga3Al2O12 is presented.
About the authors
V. M. Khanin
Peter the Great St. Petersburg Polytechnic University; Philips Research Eindhoven
Author for correspondence.
Email: khanin.vasilii@mail.ru
Russian Federation, St. Petersburg, 195251; High Tech Campus 34, Eindhoven, 5656 AE
P. A. Rodnyi
Peter the Great St. Petersburg Polytechnic University
Email: khanin.vasilii@mail.ru
Russian Federation, St. Petersburg, 195251
H. Wieczorek
Philips Research Eindhoven
Email: khanin.vasilii@mail.ru
Netherlands, High Tech Campus 34, Eindhoven, 5656 AE
C. R. Ronda
Philips Research Eindhoven
Email: khanin.vasilii@mail.ru
Netherlands, High Tech Campus 34, Eindhoven, 5656 AE
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