Comparison of flash-memory elements using materials based on graphene


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Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

作者简介

I. Antonova

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University

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Email: antonova@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073

I. Kotin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antonova@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

O. Orlov

Scientific and Research Institute of Molecular Electronics

Email: antonova@isp.nsc.ru
俄罗斯联邦, Moscow, 124460

S. Devyatova

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: antonova@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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