Email this article A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices
- Authors: Sel’skii A.O.1,2, Koronovskii A.A.1, Moskalenko O.I.1, Hramov A.E.2
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Affiliations:
- Saratov State University
- Yuri Gagarin State Technical University of Saratov
- Issue: Vol 43, No 10 (2017)
- Pages: 912-915
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/206166
- DOI: https://doi.org/10.1134/S106378501710025X
- ID: 206166
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Abstract
The influence exerted by random dopant-concentration fluctuations on the current–voltage characteristics of the current flowing through a semiconductor superlattice has been studied. It was shown that the characteristics of the current flowing through the superlattice noticeably vary with the amplitude of fluctuations of nanostructure parameters. It was possible to find for a small sample the probability-density distribution of the integrated absolute values of the difference of currents at various amplitudes of the dopantconcentration fluctuations.
About the authors
A. O. Sel’skii
Saratov State University; Yuri Gagarin State Technical University of Saratov
Author for correspondence.
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012; Saratov, 410054
A. A. Koronovskii
Saratov State University
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012
O. I. Moskalenko
Saratov State University
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012
A. E. Hramov
Yuri Gagarin State Technical University of Saratov
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410054
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