A study of the effect of random dopant-concentration fluctuations on current in semiconductor superlattices
- Авторы: Sel’skii A.O.1,2, Koronovskii A.A.1, Moskalenko O.I.1, Hramov A.E.2
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Учреждения:
- Saratov State University
- Yuri Gagarin State Technical University of Saratov
- Выпуск: Том 43, № 10 (2017)
- Страницы: 912-915
- Раздел: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/206166
- DOI: https://doi.org/10.1134/S106378501710025X
- ID: 206166
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Аннотация
The influence exerted by random dopant-concentration fluctuations on the current–voltage characteristics of the current flowing through a semiconductor superlattice has been studied. It was shown that the characteristics of the current flowing through the superlattice noticeably vary with the amplitude of fluctuations of nanostructure parameters. It was possible to find for a small sample the probability-density distribution of the integrated absolute values of the difference of currents at various amplitudes of the dopantconcentration fluctuations.
Об авторах
A. Sel’skii
Saratov State University; Yuri Gagarin State Technical University of Saratov
Автор, ответственный за переписку.
Email: feanorberserk@gmail.com
Россия, Saratov, 410012; Saratov, 410054
A. Koronovskii
Saratov State University
Email: feanorberserk@gmail.com
Россия, Saratov, 410012
O. Moskalenko
Saratov State University
Email: feanorberserk@gmail.com
Россия, Saratov, 410012
A. Hramov
Yuri Gagarin State Technical University of Saratov
Email: feanorberserk@gmail.com
Россия, Saratov, 410054
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