Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

D. I. Khusyainov; A. M. Buryakov; V. R. Bilyk; E. D. Mishina; D. S. Ponomarev; R. A. Khabibullin; A. E. Yachmenev

doi:10.1134/S1063785017110220

Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

作者: Khusyainov D.I.¹, Buryakov A.M.¹, Bilyk V.R.¹, Mishina E.D.¹, Ponomarev D.S.², Khabibullin R.A.², Yachmenev A.E.²
隶属关系:
1. Moscow Technological University (MIREA)
2. Institute of Microwave Semiconductor Electronics
期: 卷 43, 编号 11 (2017)
页面: 1020-1022
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/206497
DOI: https://doi.org/10.1134/S1063785017110220
ID: 206497

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详细

The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the In_yGa_1–yAs films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a In_yGa_1–yAs film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.