The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide
- Authors: Nomoev S.A.1, Vasil’evskii I.S.1, Vinichenko A.N.1, Kozlovskii K.I.1, Chistyakov A.A.1, Mishina E.D.2, Khusyainov D.I.2, Buryakov A.M.2
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Affiliations:
- National Research Nuclear University Moscow Engineering Physics Institute
- Moscow Technological University Moscow Institute of Radio Electronics and Automation
- Issue: Vol 44, No 1 (2018)
- Pages: 44-46
- Section: Regular Papers
- URL: https://journal-vniispk.ru/1063-7850/article/view/207110
- DOI: https://doi.org/10.1134/S1063785018010169
- ID: 207110
Cite item
Abstract
Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.
About the authors
S. A. Nomoev
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Russian Federation, Moscow, 115409
I. S. Vasil’evskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Russian Federation, Moscow, 115409
A. N. Vinichenko
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Russian Federation, Moscow, 115409
K. I. Kozlovskii
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Russian Federation, Moscow, 115409
A. A. Chistyakov
National Research Nuclear University Moscow Engineering Physics Institute
Email: bello16@mail.ru
Russian Federation, Moscow, 115409
E. D. Mishina
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Email: bello16@mail.ru
Russian Federation, Moscow, 119454
D. I. Khusyainov
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Email: bello16@mail.ru
Russian Federation, Moscow, 119454
A. M. Buryakov
Moscow Technological University Moscow Institute of Radio Electronics and Automation
Author for correspondence.
Email: bello16@mail.ru
Russian Federation, Moscow, 119454
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