The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide


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Abstract

Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230°C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720°C) was established.

About the authors

S. A. Nomoev

National Research Nuclear University Moscow Engineering Physics Institute

Email: bello16@mail.ru
Russian Federation, Moscow, 115409

I. S. Vasil’evskii

National Research Nuclear University Moscow Engineering Physics Institute

Email: bello16@mail.ru
Russian Federation, Moscow, 115409

A. N. Vinichenko

National Research Nuclear University Moscow Engineering Physics Institute

Email: bello16@mail.ru
Russian Federation, Moscow, 115409

K. I. Kozlovskii

National Research Nuclear University Moscow Engineering Physics Institute

Email: bello16@mail.ru
Russian Federation, Moscow, 115409

A. A. Chistyakov

National Research Nuclear University Moscow Engineering Physics Institute

Email: bello16@mail.ru
Russian Federation, Moscow, 115409

E. D. Mishina

Moscow Technological University Moscow Institute of Radio Electronics and Automation

Email: bello16@mail.ru
Russian Federation, Moscow, 119454

D. I. Khusyainov

Moscow Technological University Moscow Institute of Radio Electronics and Automation

Email: bello16@mail.ru
Russian Federation, Moscow, 119454

A. M. Buryakov

Moscow Technological University Moscow Institute of Radio Electronics and Automation

Author for correspondence.
Email: bello16@mail.ru
Russian Federation, Moscow, 119454

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