Email this article Current-Oscillation Power Growth in a Semiconductor Superlattice with Regard to Interminiband Tunneling
- Authors: Sel’skii A.O.1
-
Affiliations:
- Saratov State University
- Issue: Vol 44, No 5 (2018)
- Pages: 388-391
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/207636
- DOI: https://doi.org/10.1134/S1063785018050115
- ID: 207636
Cite item
Open Access
Access granted
Subscription Access
Abstract
The total power of oscillations of current flowing through a semiconductor superlattice with different gaps between the first and second minibands is discussed. It is demonstrated that, with a decrease in the band gap, i.e., with an increase in the probability of interminiband tunneling, the total current-oscillation power increases when certain voltages are applied to the superlattice.
About the authors
A. O. Sel’skii
Saratov State University
Author for correspondence.
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012
Supplementary files
