A Precise Algorithm of Memristor Switching to a State with Preset Resistance


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Abstract

An algorithm of memristor switching with high precision to a state with preset resistance has been developed based on the application of voltage pulses with smoothly increasing amplitude and the duration varying randomly within preset limits. It is shown that the proposed algorithm can be implemented in memristor structures based on (Co40Fe40B20)x(LiNbO3)100–x nanocomposites with x ≈ 10 at. %. Optimum parameters are selected for the algorithm operation with a minimum number of iterations that allows the accuracy of resistance setting to be no worse than 0.5%. The obtained results can be used in the creation of neuromorphic systems.

About the authors

K. E. Nikiruy

National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: NikiruyKristina@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700

A. V. Emelyanov

National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University)

Email: NikiruyKristina@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700

V. A. Demin

National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University)

Email: NikiruyKristina@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700

V. V. Rylkov

National Research Center Kurchatov Institute

Email: NikiruyKristina@gmail.com
Russian Federation, Moscow, 123182

A. V. Sitnikov

Voronezh State Technical University

Email: NikiruyKristina@gmail.com
Russian Federation, Voronezh, 394026

P. K. Kashkarov

National Research Center Kurchatov Institute; Moscow Institute of Physics and Technology (State University); Moscow State University

Email: NikiruyKristina@gmail.com
Russian Federation, Moscow, 123182; Dolgoprudnyi, Moscow oblast, 141700; Moscow, 119991

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