The Mechanism of Generation of Singlet Oxygen in the Presence of Excited Nanoporous Silicon
- Авторы: Samosvat D.M.1, Chikalova-Luzina O.P.1, Khromov V.S.1, Zegrya A.G.1, Zegrya G.G.1
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Учреждения:
- Ioffe Physical Technical Institute
- Выпуск: Том 44, № 6 (2018)
- Страницы: 479-482
- Раздел: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/207693
- DOI: https://doi.org/10.1134/S1063785018060093
- ID: 207693
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Аннотация
A theoretical analysis of the mechanism of generation of singlet oxygen in the presence of photoexcited nanoporous silicon is presented. It is demonstrated that the mechanism of generation of singlet oxygen is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule by the exchange mechanism. An analytical expression of the probability of energy transfer from nanoporous silicon to an oxygen molecule is obtained, and a numerical estimate of this process is given. The numerical estimation is of the order of 103–104 s–1, a value that agrees rather well with the experiment.
Об авторах
D. Samosvat
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: samosvat@yandex.ru
Россия, St. Petersburg, 194021
O. Chikalova-Luzina
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Россия, St. Petersburg, 194021
V. Khromov
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Россия, St. Petersburg, 194021
A. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Россия, St. Petersburg, 194021
G. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Россия, St. Petersburg, 194021
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