Peculiarities of the Condensation of Silicon on the Surface of a Tungsten Single Crystal

Abstract

Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and numbers n of monatomic layers of the deposited condensate is studied. At low temperatures of T ~ 600 K, a low-temperature Si monolayer with the structure of pure W is formed on the surface, whereas another structure of a high-temperature monolayer, namely, surface silicide, is formed at T ≥ 1000 K. The low-temperature monolayer and surface silicide also differ in their orienting effect when constructing the Si layers. In the case of condensation on a low-temperature monolayer, crystallites of Si are formed starting already from the third monolayer at n ≥ 3, whereas the Si crystallites grow during the condensation on surface silicide starting from n ≥ 300 monolayers.