The Influence of an Amorphous Silicon Layer on the Adsorption Properties of a Semiconductor Structure under Photostimulation Conditions

Abstract

The photostimulated adsorption of glucose oxidase (GOx) on the surface of single-crystalline Si wafers with an amorphous silicon (a-Si) layer was examined. Estimation of the difference between the surface coverage by GOx molecules deposited under illumination and in the dark showed that this value increased for the structures with a-Si layer by a factor of 2.5 in the case of n-Si and by a factor of 1.5 in the case of p-Si. It is revealed that the n-Si/a-Si structures can be used for preliminary photostimulation of the GOx adsorption  process.