Email this article A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface
- Authors: Benemanskaya G.V.1,2, Dement’ev P.A.1, Kukushkin S.A.2,3,4, Osipov A.V.2,3, Timoshnev S.N.2,5
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Issue: Vol 45, No 3 (2019)
- Pages: 201-204
- Section: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208233
- DOI: https://doi.org/10.1134/S1063785019030039
- ID: 208233
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Abstract
The electronic properties of the Ba/SiC/Si(111)-8° nanointerface have been studied for the first time by photoelectron spectroscopy using synchrotron radiation. The experiments are conducted in situ in superhigh vacuum on submonolayer Ba coatings of SiC/Si(111)-8° samples grown by the method of substitution of atoms. It is found that the adsorption of Ba causes strong changes in the spectrum of the C 1s core level. It is shown that the effect is due to the formation of a new, previously unknown carbon nanostructure. It is found that the nanostructure is formed exclusively on the SiC vicinal surfaces in the presence of stabilizing adsorbed Ba metal atoms and consists of carbon rings, in which the chemical bonds are close in nature to the bonds characteristic of aromatic compounds.
About the authors
G. V. Benemanskaya
Ioffe Physical Technical Institute, Russian Academy of Sciences; Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
Author for correspondence.
Email: galina.benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
P. A. Dement’ev
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: galina.benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Kukushkin
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University); Peter the Great St. Petersburg Polytechnic University
Email: galina.benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101; St. Petersburg, 195251
A. V. Osipov
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Email: galina.benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101
S. N. Timoshnev
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences; St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: galina.benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 194021
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