Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor


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Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.

作者简介

M. Dorokhin

Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod

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Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

P. Demina

Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Budanov

Voronezh State University of Engineering Technologies

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Voronezh, 394036

Yu. Vlasov

Voronezh State University of Engineering Technologies

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Voronezh, 394036

G. Kotov

Voronezh State University of Engineering Technologies

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Voronezh, 394036

A. Zdoroveyshchev

Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

V. Trushin

Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

B. Zvonkov

Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

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